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* Density *   * Potential *  * Quasi-bound states density *

The following charge density (left),  potential profile (middle) and quasi-bound state density (right) were obtained using the 3D CBR simulator for 10nm double-gate MOSFET, with the applied bias of Vds=0.4 V:

Note how the formation of the channel (around Vgs=-0.2 V) corresponds to the potential profile change. Also, the density of quasi-bound states is, predictably, decreasing with the increasing of the gate voltage. Some discussion on the quasi-bound states and their importance for the self-consistent convergence can be found here, see slides 20-23.