Completed elective classes.
CHE 543 Thermodynamics of Chemical Systems
CHE 598 Deposition and Etch
MSE 598 Growth and Processing of Semiconductors
EEE 536 Semiconductor Characterization
IEE 572 Design of Experiments
PHY 571 Quantum Physics
Started high-k dielectric project.
Learned that reactive sputtering of hafnium silicide is not a
viable process. Deposition rate is very slow and could not be
increased due to power supply limitations. Hafnium silicide
target was extremely sensitive to cracking.
Reactive sputtering of aluminum oxide also suffered from slow
deposition rate. Power supply limits also prevented
increasing deposition rate.
Started work on anodic oxidation of tantalum process. Steady
progress continues to be made.
Gave poster presentation at NSF sponsored conference.
Gave poster presentation to FDC sponsors.
Seminar presentation:
Analysis of Ba0.5Sr0.5Co0.8Fe0.2O3-x Stability
Enhancement Using a Two Step Reactor Design
Continuing work on anodized tantalum pentoxide. Spectroscopic ellipsometry models have been verified for thickness and index of refraction calculations. Capacitors are being made using a shadow mask. Wafer maps of capacitance and leakage current are being made. Collaborative work has started on applying tantalum pentoxide films to pentacene based organic thin film transistors.
Seminar presentation:
Variable Angle Spectroscopic Ellipsometry of
Anodically Oxidized Tantalum Films
Seminar presentation:
High-k
Dielectric for Flexible Displays using Anodically Oxidized Tantalum